VN2110K1-G 编带
N-Channel 100V 200mA Tj 360mW Tc Surface Mount SOT-23-3
得捷:
MOSFET N-CH 100V 200MA SOT23-3
欧时:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V
立创商城:
N沟道 100V 200mA
贸泽:
MOSFET 100V 4Ohm
e络盟:
晶体管, MOSFET, N沟道, 200 mA, 100 V, 3 ohm, 10 V, 2.4 V
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the VN2110K1-G power MOSFET, developed by Microchip Technology. Its maximum power dissipation is 360 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 4.0 Ohm3 SOT-23 T/R
TME:
Transistor: N-MOSFET; unipolar; 100V; 0.6A; 360mW; SOT23-3
Verical:
Trans MOSFET N-CH Si 100V 0.2A 3-Pin SOT-23 T/R
Win Source:
MOSFET N-CH 100V 0.2A SOT23-3
额定功率 0.36 W
针脚数 3
漏源极电阻 3 Ω
极性 N-CH
耗散功率 360 mW
阈值电压 2.4 V
漏源极电压Vds 100 V
连续漏极电流Ids 0.2A
上升时间 5 ns
输入电容Ciss 50pF @25VVds
额定功率Max 360 mW
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 360mW Tc
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VN2110K1-G Microchip 微芯 | 当前型号 | 当前型号 |
BSS123-7-F 美台 | 功能相似 | VN2110K1-G和BSS123-7-F的区别 |
2N7002-7-F 美台 | 功能相似 | VN2110K1-G和2N7002-7-F的区别 |
2N7002K-7 美台 | 功能相似 | VN2110K1-G和2N7002K-7的区别 |