晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.5 ohm, 10 V, 2.4 V
If you need to either amplify or switch between signals in your design, then Technology"s power MOSFET is for you. Its maximum power dissipation is 1000 mW. This device is made with dmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
额定功率 1 W
针脚数 3
漏源极电阻 2.5 Ω
极性 N-CH
耗散功率 1 W
阈值电压 2.4 V
漏源极电压Vds 60 V
连续漏极电流Ids 0.35A
上升时间 5 ns
输入电容Ciss 65 pF
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1W Tc
安装方式 Through Hole
引脚数 3
封装 TO-92-3
封装 TO-92-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Bag
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
VN0106N3-G Microchip 微芯 | 当前型号 | 当前型号 |
VN0106N3-G-P003 微芯 | 类似代替 | VN0106N3-G和VN0106N3-G-P003的区别 |
2V7002LT1G 安森美 | 功能相似 | VN0106N3-G和2V7002LT1G的区别 |
2N7002K-7 美台 | 功能相似 | VN0106N3-G和2N7002K-7的区别 |