OMNIFET II完全autoprotected功率MOSFET OMNIFET II fully autoprotected Power MOSFET
Description
The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
Features
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power MOSFET analog driving
■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive
输出接口数 1
输出电流 7 A
供电电流 0.1 mA
漏源极电阻 120 mΩ
极性 N-Channel
耗散功率 35 W
漏源击穿电压 40.0 V
连续漏极电流Ids 3.50 A
上升时间 250 ns
输出电流Max 3.5 A
输出电流Min 3.5 A
输入数 1
下降时间 250 ns
耗散功率Max 35000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-2
封装 TO-252-2
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
VND3NV04TR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VND3NV0413TR 意法半导体 | 完全替代 | VND3NV04TR-E和VND3NV0413TR的区别 |
VND3NV04 意法半导体 | 完全替代 | VND3NV04TR-E和VND3NV04的区别 |
VND3NV04-E 意法半导体 | 功能相似 | VND3NV04TR-E和VND3NV04-E的区别 |