VN10LFTA 编带
Create an effective common drain amplifier using this power MOSFET from Zetex. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with dmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
额定电压DC 60.0 V
额定电流 150 mA
漏源极电阻 7.50 Ω
极性 N-Channel
耗散功率 0.33 W
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 150 mA
输入电容Ciss 60pF @25VVds
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 330mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
VN10LFTA Diodes 美台 | 当前型号 | 当前型号 |
BSS123-7-F 美台 | 类似代替 | VN10LFTA和BSS123-7-F的区别 |
2N7002K-7 美台 | 类似代替 | VN10LFTA和2N7002K-7的区别 |
MMBF170-7-F 美台 | 类似代替 | VN10LFTA和MMBF170-7-F的区别 |