WPB4001-1E

WPB4001-1E图片1
WPB4001-1E图片2
WPB4001-1E概述

TO-3P N-CH 500V 26A

通孔 N 通道 500 V 26A(Ta) 2.5W(Ta),220W(Tc) TO-3P-3L


得捷:
MOSFET N-CH 500V 26A TO3P-3L


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the WPB4001-1E power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 2500 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET N-CH 500V 26A 3-Pin TO-3P Tube


Verical:
Trans MOSFET N-CH 500V 26A 3-Pin3+Tab TO-3P Tube


WPB4001-1E中文资料参数规格
技术参数

极性 N-CH

耗散功率 2.5 W

漏源极电压Vds 500 V

连续漏极电流Ids 26A

上升时间 156 ns

输入电容Ciss 2250pF @30VVds

下降时间 94 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2.5W Ta, 220W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-3-3

外形尺寸

封装 TO-3-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买WPB4001-1E
型号: WPB4001-1E
描述:TO-3P N-CH 500V 26A

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