W9864G6IH-6

DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54Pin TSOP-II

1\. GENERAL DESCRIPTION

W9864G6IH is a high-speed synchronous dynamic random access memory SDRAM, organized as

1M words ×4 banks ×16 bits. W9864G6IH delivers a data bandwidth of up to 200M words per second. For different application, W9864G6IH is sorted intothe following speed grades: -5, -6, -7/-7S. The -5 parts can run up to 200MHz/CL3. The -6 parts can run up to 166MHz/CL3. The -7/-7S parts can run up to 143MHz/CL3. And the grade of -7S with tRP = 18nS.

FEATURES

• 3.3V± 0.3V for -5/-6 speed grades power supply

• 2. 7V~3.6V for -7/-7S speed grades power supply

•1,048,576 words×4 banks ×16 bits organization

• Self Refresh Current: Standard and Low Power

• CAS Latency: 2 & 3

• Burst Length: 1, 2, 4, 8 and full page

• Sequential and Interleave Burst

• Byte data controlled by LDQM, UDQM

• Auto-precharge and controlled precharge

• Burst read, single write operation

• 4K refresh cycles/64mS

•Interface: LVTTL

• Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant