W987D2HBJX6E概述
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13MM, 0.8MM PITCH, HALOGEN AND LEAD FREE, VFBGA-90
SDRAM - Mobile LPSDR Memory IC 128Mb 4M x 32 Parallel 166MHz 5.4ns 90-VFBGA 8x13
得捷:
IC DRAM 128MBIT PARALLEL 90VFBGA
艾睿:
DRAM Chip Mobile LPSDR SDRAM 128Mbit 4Mx32 1.8V 90-Pin VFBGA
W987D2HBJX6E中文资料参数规格
W987D2HBJX6E引脚图与封装图 
在线购买W987D2HBJX6E
型号： W987D2HBJX6E
描述：Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13MM, 0.8MM PITCH, HALOGEN AND LEAD FREE, VFBGA-90