DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54Pin TFBGA
GENERAL DESCRIPTION
W9864G6JT is a high-speed synchronous dynamic random access memory SDRAM, organized as 1M words x 4 banks x 16 bits. W9864G6JT delivers a data bandwidth of up to 166M words per second. For different application, W9864G6JT is sorted into the following speed grades: -6, -6I, -6A and -6K. They are compliant to the 166MHz/CL3 specification. -6I industrial grade and -6A automotive grade which is guaranteed to support -40°C ≤ TA ≤ 85°C. The -6K automotive grade, if offered, has two simultaneous requirements: ambient temperature TA surrounding the device cannot be less than -40°C or greater than +105°C, and the case temperature TCASE cannot be less than -40°C or greater than +105°C.
FEATURES
• 3.3V ± 0.3V Power Supply
• Up to 166 MHz Clock Frequency
• 1,048,576 Words 4 banks 16 bits organization
• Self Refresh Mode
• CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8 and full page
• Sequential and Interleave Burst
• Burst Read, Single Writes Mode
• Byte Data Controlled by LDQM, UDQM
• Auto-precharge and Controlled Precharge
• 4K Refresh cycles/64 mS, @ -40°C ≤ TA / TCASE ≤ 85°C
• 4K Refresh cycles/16 mS, @ 85°C < TA / TCASE ≤ 105°C
• Interface: LVTTL
• Packaged in TFBGA 54 Ball 8x8 mm2, using lead free materials with RoHS compliant
• Not support self refresh function with TA / TCASE > 85°C
