DDR DRAM, 8MX16, 0.4ns, CMOS, PBGA84, 8 X 12.5MM, ROHS COMPLIANT, WBGA-84
1\. GENERAL DESCRIPTION
The W9751G6JB is a 512M bits DDR2 SDRAM, organized as 8,388,608 words 4 banks 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin DDR2-1066 for various applications. W9751G6JB is sorted into the following speed grades: -18, -25, 25I, 25A, 25K and -3. The -18 grade parts is compliant to the DDR2-1066 7-7-7 specification. The -25/25I/25A/25K grade parts are compliant to the DDR2-800 5-5-5 or DDR2-800 6-6-6 specification the 25I industrial grade parts which is guaranteed to support -40°C ≤ TCASE ≤ 95°C. The -3 grade parts is compliant to the DDR2-667 5-5-5 specification.
2\. FEATURES
• Power Supply: VDD, VDDQ = 1.8 V 0.1V
• Double Data Rate architecture: two data transfers per clock cycle
• CAS Latency: 3, 4, 5, 6 and 7
• Burst Length: 4 and 8
• Bi-directional, differential data strobes DQS and DQS are transmitted / received with data
• Edge-aligned with Read data and center-aligned with Write data
• DLL aligns DQ and DQS transitions with clock
• Differential clock inputs CLK and CLK
• Data masks DM for write data
• Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
• Posted CAS programmable additive latency supported to make command and data bus efficiency
• Read Latency = Additive Latency plus CAS Latency RL = AL + CL
• Off-Chip-Driver impedance adjustment OCD and On-Die-Termination ODT for better signal quality
• Auto-precharge operation for read and write bursts
• Auto Refresh and Self Refresh modes
• Precharged Power Down and Active Power Down
• Write Data Mask
• Write Latency = Read Latency - 1 WL = RL - 1
• Interface: SSTL_18
• Packaged in WBGA 84 Ball 8X12.5 mm2, using Lead free materials with RoHS compliant