W29C020CP70B

W29C020CP70B概述

256K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C020C results in fast write erase/program operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written erased and programmed by using standard EPROM programmers.

FEATURES

·  Single 5-volt write erase and program operations

·  Fast page-write operations

-  128 bytes per page

-  Page write erase/program cycle: 10 mS max.

-  Effective byte-write erase/program cycle time: 39 mS

-  Optional software-protected data write

·  Fast chip-erase operation: 50 mS

·  Two 8 KB boot blocks with lockout

·  Whole chip cycling: 10K typ.

·  Read access time: 70/90/120 nS

·  Twenty-year data retention

·  Software and hardware data protection

·  Low power consumption

-  Active current: 25 mA typ.

-  Standby current: 20 mA typ.

·  Automatic write erase/program timing with internal VPP generation

·  End of write erase/program detection

-  Toggle bit

-  Data polling

·  Latched address and data

·  All inputs and outputs directly TTL compatible

·  JEDEC standard byte-wide pinouts

·  Available packages: 32-pin 600 mil DIP, 32-pin TSOP, and 32-pin PLCC

W29C020CP70B中文资料参数规格
封装参数

封装 QCCJ

外形尺寸

封装 QCCJ

其他

产品生命周期 Obsolete

数据手册

在线购买W29C020CP70B
型号: W29C020CP70B
制造商: Winbond Electronics 华邦电子股份
描述:256K X 8 CMOS FLASH MEMORY
替代型号W29C020CP70B
型号/品牌 代替类型 替代型号对比

W29C020CP70B

Winbond Electronics 华邦电子股份

当前型号

当前型号

W29C020P-70

华邦电子股份

功能相似

W29C020CP70B和W29C020P-70的区别

W29C020P-70B

华邦电子股份

功能相似

W29C020CP70B和W29C020P-70B的区别

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