W29C020P-70

W29C020P-70概述

256K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C020 results in fast write erase/program operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written erased and programmed by using standard EPROM programmers.

FEATURES

· Single 5-volt write erase and program operations

· Fast page-write operations

\- 128 bytes per page

\- Page write erase/program cycle: 10 mS max.

\- Effective byte-write erase/program cycle time: 39 mS

\- Optional software-protected data write

· Fast chip-erase operation: 50 mS

· Two 8 KB boot blocks with lockout

· Typical page write erase/program cycles: 100/1K/10K

· Read access time: 70/90/120 nS

· Ten-year data retention

· Software and hardware data protection

· Low power consumption

\- Active current: 25 mA typ.

\- Standby current: 20 mA typ.

· Automatic write erase/program timing with internal VPP generation

· End of write erase/program detection

\- Toggle bit

\- Data polling

· Latched address and data

· All inputs and outputs directly TTL compatible

· JEDEC standard byte-wide pinouts

· Available packages: 32-pin 600 mil DIP, 450 mil SOP, TSOP, and 32-pin PLCC

W29C020P-70中文资料参数规格
封装参数

封装 QCCJ

外形尺寸

封装 QCCJ

其他

产品生命周期 Obsolete

数据手册

在线购买W29C020P-70
型号: W29C020P-70
制造商: Winbond Electronics 华邦电子股份
描述:256K X 8 CMOS FLASH MEMORY
替代型号W29C020P-70
型号/品牌 代替类型 替代型号对比

W29C020P-70

Winbond Electronics 华邦电子股份

当前型号

当前型号

W29C020CP70B

华邦电子股份

功能相似

W29C020P-70和W29C020CP70B的区别

W29C020P-70B

华邦电子股份

功能相似

W29C020P-70和W29C020P-70B的区别

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