DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54Pin TSOP-II
GENERAL DESCRIPTION
W9812G6GH is a high-speed synchronous dynamic random access memory SDRAM, organizedas 2M words ×4 banks × 16 bits. Using pipelined architecture and 0.11 µmprocess technology, W9812G6GH delivers a data bandwidth of up to 166M words per second-6. For different application, W9812G6GH is sortedinto two speed grades: -6/6C/6I, -75. The –6/6C/6Iis compliant to the 166Mhz/CL3 specification, the -75 iscompliant to the133MHz/CL3specification.
FEATURES
3.3V ±0.3V Power Supply
Up to 166 MHz Clock Frequency
2,097,152 Words ×4 banks ×16 bitsorganization
Self Refresh Mode
CAS Latency: 2and 3
Burst Length:1, 2, 4, 8 and full page
Burst Read, Single Writes Mode
Byte Data Controlled by DQM
Auto-precharge and Controlled Precharge
4K Refresh cycles / 64 mS
Interface: LVTTL
Packaged in TSOP II 54 pin, 400 mil - 0.80
W9812G6GH is using Lead free materials
RoHS compliant