DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54Pin TSOP-II
GENERAL DESCRIPTION
W9812G6JH is a high-speed synchronous dynamic random access memory SDRAM, organized as 2M words x 4 banks x 16 bits. W9812G6JH delivers a data bandwidth of up to 200M words per second -5. To fully comply with the personal computer industrial standard, W9812G6JH is sorted into the following speed grades: -5, -6, -6I, -6A, -6K and -75. The -5 grade parts is compliant to the 200MHz/CL3 specification.
FEATURES
3.3V ± 0.3V Power Supply
Up to 200 MHz Clock Frequency
2,097,152 Words 4 banks 16 bits organization
Self Refresh Mode
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and full page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Auto-precharge and Controlled Precharge
4K Refresh Cycles/64 mS, @ -40°C ≤ TA / TCASE ≤ 85°C
4K Refresh Cycles/16 mS, @ 85°C < TA / TCASE ≤ 105°C
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant