功率MOS FET Power MOS FET
■ GENERAL DESCRIPTION
The is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■ FEATURES
Low On-State Resistance : Rdson=0.075Ω Vgs=-4.5V
: Rdson=0.115Ω Vgs=-2.5V
Ultra High-Speed Switching
Driving Voltage : -2.5V
P-Channel Power MOSFET
DMOS Structure
Package : SOP-8
■ APPLICATIONS
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems