X28HC256PZ-90

X28HC256PZ-90图片1
X28HC256PZ-90概述

5V ,字节EEPROM可变 5V, Byte Alterable EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with ’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory

Features

• Access time: 70ns

• Simple byte and page write

   - Single 5V supply

   - No external high voltages or VP-P control circuits

   - Self-timed

   - No erase before write

   - No complex programming algorithms

   - No overerase problem

• Low power CMOS

   - Active: 60mA

   - Standby: 500µA

• Software data protection

   - Protects data against system level inadvertent writes

• High speed page write capability

• Highly reliable Direct Write™ cell

   - Endurance: 1,000,000 cycles

   - Data retention: 100 years

• Early end of write detection

   - DATA polling

   - Toggle bit polling

• Pb-free plus anneal available RoHS compliant

X28HC256PZ-90中文资料参数规格
封装参数

安装方式 Through Hole

封装 PDIP-28

外形尺寸

封装 PDIP-28

其他

产品生命周期 Active

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买X28HC256PZ-90
型号: X28HC256PZ-90
制造商: Intersil 英特矽尔
描述:5V ,字节EEPROM可变 5V, Byte Alterable EEPROM

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