5V ,字节EEPROM可变 5V, Byte Alterable EEPROM
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with ’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory
Features
• Access time: 70ns
• Simple byte and page write
- Single 5V supply
- No external high voltages or VP-P control circuits
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
• Low power CMOS
- Active: 60mA
- Standby: 500µA
• Software data protection
- Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write™ cell
- Endurance: 1,000,000 cycles
- Data retention: 100 years
• Early end of write detection
- DATA polling
- Toggle bit polling
• Pb-free plus anneal available RoHS compliant
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
X28HC256JI-12 Intersil 英特矽尔 | 当前型号 | 当前型号 |
AT28HC256E-12JU 微芯 | 类似代替 | X28HC256JI-12和AT28HC256E-12JU的区别 |
AT28HC256-12JU 微芯 | 功能相似 | X28HC256JI-12和AT28HC256-12JU的区别 |
AT28HC256-12TU 微芯 | 功能相似 | X28HC256JI-12和AT28HC256-12TU的区别 |