5V ,字节EEPROM可变 5V, Byte Alterable EEPROM
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with ’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS.
Features
• Access Time: 90ns
• Simple Byte and Page Write
- Single 5V supply
• No external high voltages or VPP control circuits
- Self-timed
• No erase before write
• No complex programming algorithms
• No overerase problem
• Low Power CMOS
- Active: 50mA
- Standby: 500µA
• Software Data Protection
- Protects data against system level inadvertent writes
• High Speed Page Write Capability
• Highly Reliable Direct Write™ Cell
- Endurance: 100,000 write cycles
- Data retention: 100 years
- Early end of write detection
- DATA polling
- Toggle bit polling
• Two PLCC and LCC Pinouts
- X28C512
• X28C010 EPROM pin compatible
- X28C513
• Compatible with lower density EEPROMs
• Pb-Free Plus Anneal Available RoHS Compliant
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
X28C513J-15T1 Intersil 英特矽尔 | 当前型号 | 当前型号 |
X28C513J-15 英特矽尔 | 完全替代 | X28C513J-15T1和X28C513J-15的区别 |
X28C513JZ-15 英特矽尔 | 完全替代 | X28C513J-15T1和X28C513JZ-15的区别 |