ZXMN3A03E6

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ZXMN3A03E6概述

DIODES INC.  ZXMN3A03E6  晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V

The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. This new generation TRENCH MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage applications.

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Low ON-resistance
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Fast switching speed
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Low threshold
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Low gate drive
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Halogen-free, Green device
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Moisture sensitivity level 1 as per J-STD-020
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UL94V-0 Flammability rating
ZXMN3A03E6中文资料参数规格
技术参数

针脚数 6

漏源极电阻 0.05 Ω

极性 N-Channel

耗散功率 1.7 W

阈值电压 1 V

漏源极电压Vds 30 V

连续漏极电流Ids 4.60 A

工作温度Max 150 ℃

封装参数

引脚数 6

封装 SOT-23

外形尺寸

封装 SOT-23

其他

产品生命周期 Active

包装方式 Cut Tape CT

制造应用 Aerospace, Power Management, Defence, Military, Motor Drive & Control

符合标准

RoHS标准 RoHS Compliant

REACH SVHC标准 No SVHC

军工级 Yes

REACH SVHC版本 2015/12/17

数据手册

在线购买ZXMN3A03E6
型号: ZXMN3A03E6
制造商: Vishay Semiconductor 威世
描述:DIODES INC.  ZXMN3A03E6  晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V

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