ZXM62P03E6

ZXM62P03E6图片1
ZXM62P03E6图片2
ZXM62P03E6图片3
ZXM62P03E6图片4
ZXM62P03E6图片5
ZXM62P03E6图片6
ZXM62P03E6图片7
ZXM62P03E6概述

DIODES INC.  ZXM62P03E6  晶体管, MOSFET, P沟道, 2.6 A, -30 V, 110 mohm, 10 V, -1 V

The is a P-channel high density enhancement-mode MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage applications.

.
Low threshold
.
Low gate drive

Newark:
# DIODES INC.  ZXM62P03E6  MOSFET Transistor, P Channel, -1.5 A, -30 V, 110 mohm, 10 V, -1 V


ZXM62P03E6中文资料参数规格
技术参数

针脚数 6

漏源极电阻 0.11 Ω

极性 P-Channel

耗散功率 806 mW

漏源极电压Vds 20 V

连续漏极电流Ids 2.60 A

工作温度Max 150 ℃

封装参数

引脚数 6

封装 SOT-23

外形尺寸

封装 SOT-23

其他

产品生命周期 Active

包装方式 Cut Tape CT

制造应用 Power Management, Industrial, Motor Drive & Control

符合标准

RoHS标准 RoHS Compliant

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买ZXM62P03E6
型号: ZXM62P03E6
制造商: Vishay Semiconductor 威世
描述:DIODES INC.  ZXM62P03E6  晶体管, MOSFET, P沟道, 2.6 A, -30 V, 110 mohm, 10 V, -1 V
替代型号ZXM62P03E6
型号/品牌 代替类型 替代型号对比

ZXM62P03E6

Vishay Semiconductor 威世

当前型号

当前型号

ZXM62P02E6

威世

类似代替

ZXM62P03E6和ZXM62P02E6的区别

锐单商城 - 一站式电子元器件采购平台