ZXT13N50DE6

DIODES INC.  ZXT13N50DE6  单晶体管 双极, NPN, 50 V, 115 MHz, 1.1 W, 4 A, 450 hFE

The is a SuperSOT4™ NPN silicon low saturation switching Bipolar Transistor. It is a 4th generation ultra-low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency and low voltage switching applications.

.

Extremely low equivalent ON-resistance

.

Extremely low saturation voltage

.

hFE characterised up to 10A

.

-55 to 150°C Operating temperature range