ZXM61P03F概述
DIODES INC. ZXM61P03F 晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
The is a P-channel enhancement mode MOSFET from Zetex utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
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- Low on resistance
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- Low gate threshold voltage
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- Fast switching speed
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- AEC-Q101 Qualified
ZXM61P03F中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.35 Ω
极性 P-Channel
耗散功率 625 mW
漏源极电压Vds 30 V
连续漏极电流Ids 1.10 A
工作温度Max 150 ℃
封装参数
安装方式 Surface Mount
引脚数 3
封装 SOT-23
外形尺寸
封装 SOT-23
其他
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 电源管理, Power Management, 电机驱动与控制, Motor Drive & Control
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
在线购买ZXM61P03F
型号： ZXM61P03F
制造商：
Vishay Semiconductor
威世
描述：DIODES INC. ZXM61P03F 晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V