DIODES INC. ZVN3310F 晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
The is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This transistor features UL94V-0 rated case and solderable as per MIL-STD-202, method 208 matte tin finish lead frame lead free plating terminals. This MOSFET is suitable for general purpose applications. it is complementary to ZVP3310F type transistor.
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- High pulse current handling in linear mode
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- Low input capacitance
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- Fast switching speed
针脚数 3
漏源极电阻 10 Ω
极性 N-Channel
耗散功率 330 mW
阈值电压 2.4 V
漏源极电压Vds 100 V
连续漏极电流Ids 100 mA
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 SOT-23
封装 SOT-23
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 电源管理, 工业, 通信与网络, Power Management, Communications & Networking, Industrial
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZVN3310F Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
BSS123,215 恩智浦 | 功能相似 | ZVN3310F和BSS123,215的区别 |