ZDT1048

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

Summary

BVCEO > 17.5V ICcont = 5A VCEsat < 75mV @ 1A PD = 2.75W

Description

Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications.

Features

• Dual NPN device

• Very low saturation voltage

• High gain

• SM 8 package

Applications

• CCFL invertors

• Royer circuits