MOSFET P-CH 20V 8A 8-SOIC
SUMMARY
VBRDSS=-20V; RDSON=0.025 D=-8.0A
DESCRIPTION
This new generation of high density MOSFETs from utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control