70V P-channel enhancement mode MOSFET
Summary
VDSS=70V : RDSon=0.16Ω ID=5.7A
Description
This new generation of trench MOSFETs from utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
• Class D audio output stages