






Trans GP BJT NPN 20V 4.5A Automotive 6Pin SOT-23 T/R
Bipolar BJT Transistor NPN 20V 4.5A 96MHz 1.1W Surface Mount SOT-23-6
立创商城:
NPN 20V 4.5A
得捷:
TRANS NPN 20V 4.5A SOT23-6
贸泽:
Bipolar Transistors - BJT 20V NPN SuperSOT4
艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, Diodes Zetex&s;s NPN ZXT13N20DE6TA general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 1700 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7.5 V.
安富利:
* Extremely Low Equivalent on Resistance * Extremely Low Saturation Voltage * hFE characterized up to 15A * IC=4.5A Continuous Collector Current * SOT23-6 package
富昌:
ZXT13N20DE6 系列 NPN 4.5 A 20 V 表面贴装 硅 低饱和 晶体管-SOT-23-6
Chip1Stop:
Trans GP BJT NPN 20V 4.5A 6-Pin SOT-23 T/R
Verical:
Trans GP BJT NPN 20V 4.5A Automotive 6-Pin SOT-23 T/R
儒卓力:
**NPN TRANSISTOR 4,5A 20V SOT23-6 **
Win Source:
TRANS NPN 20V 4.5A SOT23-6
DeviceMart:
TRANS NPN LOSAT 20V 4.5A SOT23-6
频率 96 MHz
额定电压DC 20.0 V
额定电流 4.50 A
极性 NPN
耗散功率 1.7 W
增益频宽积 96 MHz
击穿电压集电极-发射极 20 V
集电极最大允许电流 4.5A
最小电流放大倍数hFE 300 @1A, 2V
最大电流放大倍数hFE 250 @10mA, 2V
额定功率Max 1.1 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 1700 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-23-6
长度 3.1 mm
宽度 1.8 mm
高度 1.3 mm
封装 SOT-23-6
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZXT13N20DE6TA Diodes 美台 | 当前型号 | 当前型号 |
ZXT13N20DE6TC 威世 | 类似代替 | ZXT13N20DE6TA和ZXT13N20DE6TC的区别 |