Trans GP BJT NPN 70V 1A Automotive 3Pin E-Line
- 双极 BJT - 单 NPN 70 V 1 A 150MHz 1 W 通孔 E-Line(TO-92 兼容)
得捷:
TRANS NPN 70V 1A E-LINE
艾睿:
Implement this versatile NPN ZTX692B GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 70 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
Allied Electronics:
Trans GP BJT NPN 70V 1A 3Pin ELine
安富利:
Trans GP BJT NPN 70V 1A 3-Pin E-Line
Chip1Stop:
Trans GP BJT NPN 70V 1A 3-Pin E-Line
Win Source:
TRANS NPN 70V 1A E-LINE
额定电压DC 70.0 V
额定电流 1.00 A
极性 NPN
耗散功率 1000 mW
击穿电压集电极-发射极 70 V
集电极最大允许电流 1A
最小电流放大倍数hFE 400 @500mA, 2V
额定功率Max 1 W
工作温度Max 200 ℃
工作温度Min -55 ℃
耗散功率Max 1000 mW
安装方式 Through Hole
引脚数 3
封装 TO-92-3
封装 TO-92-3
材质 Silicon
工作温度 -55℃ ~ 200℃
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZTX692B Diodes 美台 | 当前型号 | 当前型号 |
ZTX692BSTZ 美台 | 完全替代 | ZTX692B和ZTX692BSTZ的区别 |
ZTX692BSTOA 美台 | 类似代替 | ZTX692B和ZTX692BSTOA的区别 |
ZTX692BSTOB 美台 | 功能相似 | ZTX692B和ZTX692BSTOB的区别 |