Trans MOSFET P-CH 30V 6.7A 8Pin SOIC T/R
表面贴装型 P 通道 30 V 5.6A(Ta) 1.9W(Ta) 8-SO
得捷:
MOSFET P-CH 30V 5.6A 8SO
贸泽:
MOSFET 30V P-Chnl UMOS
艾睿:
Make an effective common source amplifier using this ZXMP3A16N8TA power MOSFET from Diodes Zetex. Its maximum power dissipation is 2800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
MOSFET P-Channel 30V 6.7A SOIC8
安富利:
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
富昌:
ZXMP3A16N8 系列 P 沟道 30 V 0.04 Ohm 功率MOSFET 表面贴装 - SOIC-8
Chip1Stop:
Trans MOSFET P-CH 30V 6.7A Automotive 8-Pin SOIC T/R
Verical:
Trans MOSFET P-CH 30V 5.6A Automotive 8-Pin SOIC T/R
Win Source:
MOSFET P-CH 30V 5.6A 8-SOIC
DeviceMart:
MOSFET P-CH 30V 5.6A 8-SOIC
额定电压DC -30.0 V
额定电流 -6.70 A
漏源极电阻 70.0 mΩ
极性 P-Channel
耗散功率 2.8 W
漏源极电压Vds 30 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 5.60 A
上升时间 6.5 ns
输入电容Ciss 1022pF @15VVds
额定功率Max 1.9 W
下降时间 21.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2800 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC