ZVN4206GTA

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ZVN4206GTA概述

ZVN4206GTA 编带

N-Channel 60V 1A Ta 2W Ta Surface Mount SOT-223


得捷:
MOSFET N-CH 60V 1A SOT223


立创商城:
N沟道 60V 1A


贸泽:
MOSFET N-Chnl 60V


艾睿:
Use Diodes Zetex&s;s ZVN4206GTA power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with dmos technology.


Allied Electronics:
MOSFET N-Channel 60V 1A SOT223


安富利:
Trans MOSFET N-CH 60V 1A 4-Pin3+Tab SOT-223 T/R


Chip1Stop:
Trans MOSFET N-CH 60V 1A 4-Pin3+Tab SOT-223 T/R


Verical:
Trans MOSFET N-CH 60V 1A Automotive 4-Pin3+Tab SOT-223 T/R


Win Source:
MOSFET N-CH 60V 1A SOT223


DeviceMart:
MOSFET N-CH 60V 1A SOT223


ZVN4206GTA中文资料参数规格
技术参数

额定电压DC 60.0 V

额定电流 1.00 A

漏源极电阻 1.50 Ω

极性 N-Channel

耗散功率 2 W

输入电容 100 pF

漏源极电压Vds 60 V

漏源击穿电压 60.0 V

栅源击穿电压 ±20.0 V

连续漏极电流Ids 1.00 A

上升时间 12 ns

输入电容Ciss 100pF @25VVds

额定功率Max 2 W

下降时间 15 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2000 mW

封装参数

安装方式 Surface Mount

引脚数 4

封装 TO-261-4

外形尺寸

长度 6.7 mm

宽度 3.7 mm

高度 1.65 mm

封装 TO-261-4

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

在线购买ZVN4206GTA
型号: ZVN4206GTA
制造商: Diodes 美台
描述:ZVN4206GTA 编带
替代型号ZVN4206GTA
型号/品牌 代替类型 替代型号对比

ZVN4206GTA

Diodes 美台

当前型号

当前型号

ZVN4206GTC

美台

类似代替

ZVN4206GTA和ZVN4206GTC的区别

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