Trans MOSFET N-CH 20V 1.7A 3Pin SOT-23 T/R
SUMMARY
VBRDSS=20V; RDSON=0.18V;ID=1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
额定电压DC 20.0 V
额定电流 1.70 A
漏源极电阻 240 mΩ
极性 N-Channel
耗散功率 0.806 W
输入电容 160 pF
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 1.70 A
上升时间 4.2 ns
输入电容Ciss 160pF @15VVds
额定功率Max 625 mW
下降时间 4.2 ns
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZXM61N02FTC Diodes 美台 | 当前型号 | 当前型号 |
ZXM61N02FTA 美台 | 类似代替 | ZXM61N02FTC和ZXM61N02FTA的区别 |
ZXM61N02F 美台 | 功能相似 | ZXM61N02FTC和ZXM61N02F的区别 |