ZXMHC3A01T8TA 编带
Mosfet Array 2 N and 2 P-Channel H-Bridge 30V 2.7A, 2A 1.3W Surface Mount SM-8
得捷:
MOSFET 2N/2P-CH 30V 2.7A/2A SM8
立创商城:
ZXMHC3A01T8TA
艾睿:
Create an effective common drain amplifier using this ZXMHC3A01T8TA power MOSFET from Diodes Zetex. Its maximum power dissipation is 1700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology.
Allied Electronics:
30V Enhancement MOSFET H-Bridge SM8
安富利:
Trans MOSFET N/P-CH 30V 3.1A/2.3A 8-Pin SM8 T/R
富昌:
ZXMHC3A01T8 100 V 0.12 Ohm N/P-沟道 增强模式 MOSFET 半桥 - SM-8
Chip1Stop:
Trans MOSFET N/P-CH 30V 3.1A/2.3A 8-Pin SM T/R
Verical:
Trans MOSFET N/P-CH 30V 3.1A/2.3A Automotive 8-Pin SM T/R
儒卓力:
**H-Br 30V 2A 335mOhm SM-8 **
Win Source:
MOSFET 2N/2P-CH 30V 2.7A/2A SM8
DeviceMart:
MOSFET H-BRIDGE DUAL SOT223-8
额定电流 3.10 A
针脚数 8
漏源极电阻 0.12 Ω
极性 N-Channel, P-Channel
耗散功率 1.3 W
阈值电压 1 V
输入电容 204 pF
栅电荷 5.20 nC
漏源极电压Vds 30 V
连续漏极电流Ids 2.30 A
上升时间 2.3 ns
输入电容Ciss 190pF @25VVds
额定功率Max 1.3 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1700 mW
安装方式 Surface Mount
引脚数 8
封装 SOT-223-8
封装 SOT-223-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99