ZXMP6A16 系列 70 V 0.16 Ohm P 沟道 增强模式 MOSFET - SOT-223
表面贴装型 P 通道 2.6A(Ta) 2W(Ta) SOT-223-3
立创商城:
P沟道 70V 2.6A
得捷:
MOSFET P-CH 70V 2.6A SOT223
贸泽:
MOSFET P-Ch 70V 3.7A
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the ZXMP7A17GTA power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 3900 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MOSFET P-Channel 70V 3.7A SOT223
安富利:
Trans MOSFET P-CH 70V 3.7A 4-Pin3+Tab SOT-223 T/R
富昌:
ZXMP6A16 系列 70 V 0.16 Ohm P 沟道 增强模式 MOSFET - SOT-223
Chip1Stop:
Trans MOSFET P-CH 70V 3.7A Automotive 4-Pin3+Tab SOT-223 T/R
Verical:
Trans MOSFET P-CH 70V 3.7A Automotive 4-Pin3+Tab SOT-223 T/R
儒卓力:
**P-CH -70V -3,7A 160mOhm TO252-3 **
Win Source:
MOSFET P-CH 70V 3.7A SOT-223
DeviceMart:
MOSFET P-CH 70V 3.7A SOT-223
额定电压DC -70.0 V
额定电流 -3.70 A
极性 P-CH
耗散功率 3.9 W
输入电容 635 pF
栅电荷 9.60 nC
漏源极电压Vds 70 V
连续漏极电流Ids 3.70 A
上升时间 3.4 ns
输入电容Ciss 635pF @40VVds
额定功率Max 2 W
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3900 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.65 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99