Trans GP BJT NPN 60V 4.5A 710mW Automotive 3Pin E-Line
- 双极 BJT - 单 NPN 130MHz 通孔 E-Line(TO-92 兼容)
得捷:
TRANS NPN 60V 4.5A E-LINE
艾睿:
The versatility of this NPN ZXTN2010A GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 710 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
安富利:
Trans GP BJT NPN 60V 4.5A 3-Pin E-Line
额定电压DC 60.0 V
额定电流 4.50 A
极性 NPN
耗散功率 710 mW
击穿电压集电极-发射极 60 V
集电极最大允许电流 4.5A
最小电流放大倍数hFE 100 @2A, 1V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 710 mW
安装方式 Through Hole
引脚数 3
封装 TO-92-3
封装 TO-92-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXTN2010A Diodes 美台 | 当前型号 | 当前型号 |
ZXTN2010ASTZ 美台 | 类似代替 | ZXTN2010A和ZXTN2010ASTZ的区别 |