









双极晶体管 - 双极结型晶体管BJT PNP Medium Power
Zetex has the solution to your circuit"s high-voltage requirements with their PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
频率 200 MHz
额定电压DC -100 V
额定电流 -2.00 A
极性 PNP
耗散功率 1810 mW
击穿电压集电极-发射极 100 V
集电极最大允许电流 2A
最小电流放大倍数hFE 100 @10mA, 2V
额定功率Max 1.25 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1810 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.05 mm
宽度 1.4 mm
高度 1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99