Trans GP BJT PNP 100V 5A 4200mW Automotive 3Pin2+Tab DPAK T/R
- 双极 BJT - 单 PNP 100 V 5 A 125MHz 4.2 W 表面贴装型 TO-252-3
得捷:
TRANS PNP 100V 5A TO252-3
立创商城:
PNP 100V 5A
艾睿:
Jump-start your electronic circuit design with this versatile PNP ZXT953KTC GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
Verical:
Trans GP BJT PNP 100V 5A 4200mW Automotive 3-Pin2+Tab DPAK T/R
Win Source:
TRANS PNP 100V 5A D-PAK
DeviceMart:
TRANSISTOR PNP LO-SAT 100V D-PAK
频率 125 MHz
额定电压DC -100 V
额定电流 -5.00 A
极性 PNP
耗散功率 4.2 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 5A
最小电流放大倍数hFE 100 @1A, 1V
额定功率Max 4.2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 4200 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99