DIODES INC. ZXMP6A16KTC 晶体管, MOSFET, P沟道, 8.2 A, -60 V, 85 mohm, -10 V, -1 V
表面贴装型 P 通道 60 V 5.4A(Ta) 2.11W(Ta) TO-252-3
得捷:
MOSFET P-CH 60V 5.4A TO252-3
立创商城:
P沟道 60V 5.4A
e络盟:
晶体管, MOSFET, P沟道, 8.2 A, -60 V, 0.085 ohm, -10 V, -1 V
艾睿:
Make an effective common gate amplifier using this ZXMP6A16KTC power MOSFET from Diodes Zetex. Its maximum power dissipation is 9760 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology.
Allied Electronics:
MOSFET P-Channel 60V 8.2A DPAK
安富利:
Trans MOSFET P-CH 60V 8.2A 3-Pin2+Tab DPAK T/R
富昌:
P-Channel 60 V 0.085 Ω Surface Mount Power MOSFET - TO-252
Verical:
Trans MOSFET P-CH 60V 8.2A 3-Pin2+Tab DPAK T/R
Newark:
# DIODES INC. ZXMP6A16KTC MOSFET Transistor, P Channel, -8.2 A, -60 V, 85 mohm, -10 V, -1 V
DeviceMart:
MOSFET P-CH 60V DPAK
Win Source:
MOSFET P-CH 60V DPAK
针脚数 3
漏源极电阻 0.085 Ω
极性 P-Channel
耗散功率 9.76 W
阈值电压 1 V
输入电容 1021 pF
漏源极电压Vds 60 V
连续漏极电流Ids 8.20 A
上升时间 4.1 ns
输入电容Ciss 1021pF @30VVds
额定功率Max 2.11 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.11W Ta
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电机驱动与控制, 电源管理, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17