Trans GP BJT NPN 80V 3.8A 2450mW Automotive 3Pin DFN EP T/R
- 双极 BJT - 单 NPN 80 V 3.5 A 160MHz 3 W 表面贴装型 DFN2020B-3
得捷:
TRANS NPN 80V 3.5A DFN2020B-3
立创商城:
NPN 80V 3.5A
艾睿:
Use this versatile NPN ZXTN620MATA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
80V NPN Low Saturation Transistor DFN3
安富利:
Trans GP BJT NPN 80V 3.8A 3-Pin DFN EP T/R
Chip1Stop:
Trans GP BJT NPN 80V 3.8A 3-Pin DFN EP T/R
Verical:
Trans GP BJT NPN 80V 3.8A 2450mW Automotive 3-Pin DFN EP T/R
DeviceMart:
TRANS NPN 80V 3.5A 3-DFN
Win Source:
TRANS NPN 80V 3.5A 3-DFN
频率 160 MHz
极性 NPN
耗散功率 2.45 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 3.8A
最小电流放大倍数hFE 300 @200mA, 2V
额定功率Max 3 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2450 mW
安装方式 Surface Mount
引脚数 3
封装 DFN-3
高度 0.58 mm
封装 DFN-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXTN620MATA Diodes 美台 | 当前型号 | 当前型号 |
ZXTN619MATA 美台 | 类似代替 | ZXTN620MATA和ZXTN619MATA的区别 |
ZXTN618MATA 美台 | 类似代替 | ZXTN620MATA和ZXTN618MATA的区别 |
ZXTP717MATA 美台 | 类似代替 | ZXTN620MATA和ZXTP717MATA的区别 |