TRANSISTOR PNP 150V SOT223
Implement this versatile PNP GP BJT from Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 100 MHz
极性 PNP
耗散功率 2 W
击穿电压集电极-发射极 150 V
集电极最大允许电流 2A
最小电流放大倍数hFE 60 @10mA, 5V
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
高度 1.65 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZXTP5401GTA Diodes 美台 | 当前型号 | 当前型号 |
DZT5401-13 美台 | 类似代替 | ZXTP5401GTA和DZT5401-13的区别 |