ZXTP25100CZ 系列 PNP 100 V 1 A 中等功率 晶体管 表面贴装 - SOT-89-3
Implement this versatile PNP GP BJT from Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
频率 180 MHz
极性 PNP
耗散功率 4460 mW
增益频宽积 180 MHz
击穿电压集电极-发射极 100 V
集电极最大允许电流 1A
最小电流放大倍数hFE 200 @10mA, 2V
额定功率Max 2.4 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 4460 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.6 mm
宽度 2.6 mm
高度 1.6 mm
封装 SOT-89-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC