Trans GP BJT PNP 12V 4.5A 2450mW Automotive 3Pin DFN EP T/R
- 双极 BJT - 单 PNP 100MHz 表面贴装型 U-DFN2020-3
得捷:
TRANS PNP 12V 4.5A 3DFN
立创商城:
PNP 12V 4A
艾睿:
Add switching and amplifying capabilities to your electronic circuit with this PNP ZXTP717MATA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
12V PNP Low Saturation Transistor DFN3
安富利:
Trans GP BJT PNP 12V 4.5A 3-Pin DFN EP T/R
Chip1Stop:
Trans GP BJT PNP 12V 4.5A 3-Pin DFN EP T/R
Verical:
Trans GP BJT PNP 12V 4.5A 2450mW Automotive 3-Pin DFN EP T/R
DeviceMart:
TRANS PNP 12V 4A 3-DFN
Win Source:
TRANS PNP 12V 4A 3-DFN
频率 110 MHz
极性 PNP
耗散功率 2.45 W
击穿电压集电极-发射极 12 V
集电极最大允许电流 4.5A
最小电流放大倍数hFE 180 @2.5A, 2V
额定功率Max 3 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2450 mW
安装方式 Surface Mount
引脚数 3
封装 DFN-3
封装 DFN-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXTP717MATA Diodes 美台 | 当前型号 | 当前型号 |
ZXTN619MATA 美台 | 类似代替 | ZXTP717MATA和ZXTN619MATA的区别 |
ZXTN620MATA 美台 | 类似代替 | ZXTP717MATA和ZXTN620MATA的区别 |
ZXTP720MATA 美台 | 类似代替 | ZXTP717MATA和ZXTP720MATA的区别 |