双极晶体管 - 双极结型晶体管BJT PNP 40V HIGH GAIN
Do you require a transistor in your circuit operating in the high-voltage range? This PNP general purpose bipolar junction transistor, developed by Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.
频率 270 MHz
极性 PNP
耗散功率 4460 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 3A
最小电流放大倍数hFE 300 @10mA, 2V
最大电流放大倍数hFE 300
额定功率Max 2.4 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 4460 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.6 mm
宽度 2.6 mm
高度 1.6 mm
封装 SOT-89-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99