12V, SOT23F, PNP medium power transistor
- 双极 BJT - 单 PNP 250MHz 表面贴装型 SOT-23F
得捷:
TRANS PNP 12V 4A SOT23F
立创商城:
PNP 12V 4A
艾睿:
The PNP ZXTP07012EFFTA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
Transistor PNP 12V 4A SOT23F
安富利:
Trans GP BJT PNP 12V 4A 3-Pin SOT-23F T/R
Chip1Stop:
Trans GP BJT PNP 12V 4A 3-Pin SOT-23F T/R
DeviceMart:
TRANS PNP MED PWR 12V SOT23F-3
Win Source:
TRANS PNP 12V 4A SOT23F-3
极性 PNP
耗散功率 2000 mW
击穿电压集电极-发射极 12 V
集电极最大允许电流 4A
最小电流放大倍数hFE 500 @10mA, 2V
额定功率Max 1.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC