Trans GP BJT NPN 100V 5.25A 4460mW Automotive 4Pin3+Tab SOT-89 T/R
This NPN general purpose bipolar junction transistor from Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
频率 150 MHz
极性 NPN
耗散功率 4.46 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 5.25A
最小电流放大倍数hFE 200 @100mA, 2V
最大电流放大倍数hFE 500 @100mA, 2V
额定功率Max 2.4 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 4460 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
宽度 2.6 mm
封装 SOT-89-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99