ZXTN4006ZTA 编带
- 双极 BJT - 单 NPN - 表面贴装型 SOT-89-3
得捷:
TRANS NPN 200V 1A SOT89-3
立创商城:
NPN 200V 1A
艾睿:
Implement this NPN ZXTN4006ZTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 7 V.
Allied Electronics:
Trans; NPN; Transistor; GP; 200V 1A SOT89
安富利:
Trans GP BJT NPN 200V 1A 4-Pin3+Tab SOT-89 T/R
Chip1Stop:
Trans GP BJT NPN 200V 1A 4-Pin3+Tab SOT-89 T/R
Verical:
Trans GP BJT NPN 200V 1A 1500mW Automotive 4-Pin3+Tab SOT-89 T/R
额定功率 1.5 W
极性 NPN
耗散功率 1.5 W
上升时间 496 ns
击穿电压集电极-发射极 200 V
集电极最大允许电流 1A
最小电流放大倍数hFE 60 @85mA, 0.25V
最大电流放大倍数hFE 100 @150mA, 0.32V
额定功率Max 1.5 W
下降时间 293 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1500 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
封装 SOT-89-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99