ZXTN25100DZTA 编带
- 双极 BJT - 单 NPN 100 V 2.5 A 175MHz 2.4 W 表面贴装型 SOT-89-3
得捷:
TRANS NPN 100V 2.5A SOT89-3
立创商城:
NPN 100V 2.5A
贸泽:
Bipolar Transistors - BJT NPN 100V HIGH GAIN
艾睿:
The versatility of this NPN ZXTN25100DZTA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 100V 2.5A 4-Pin3+Tab SOT-89 T/R
Chip1Stop:
Trans GP BJT NPN 100V 2.5A 4-Pin3+Tab SOT-89 T/R
Verical:
Trans GP BJT NPN 100V 2.5A 4460mW Automotive 4-Pin3+Tab SOT-89 T/R
Win Source:
TRANS NPN 100V 2.5A SOT89
频率 175 MHz
极性 NPN
耗散功率 4460 mW
增益频宽积 175 MHz
击穿电压集电极-发射极 100 V
集电极最大允许电流 2.5A
最小电流放大倍数hFE 300 @10mA, 2V
最大电流放大倍数hFE 300
额定功率Max 2.4 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 4460 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.6 mm
宽度 2.6 mm
高度 1.6 mm
封装 SOT-89-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99