Trans GP BJT NPN 55V 6A 2100mW Automotive 4Pin3+Tab SOT-89 T/R
- 双极 BJT - 单 NPN 55 V 6 A 200MHz 2.1 W 表面贴装型 SOT-89-3
得捷:
TRANS NPN 55V 6A SOT89-3
立创商城:
NPN 55V 6A
艾睿:
Jump-start your electronic circuit design with this versatile NPN ZXTN19055DZTA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 55 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
Transistor NPN 55V 6A SOT89
安富利:
Trans GP BJT NPN 55V 6A 4-Pin3+Tab SOT-89 T/R
Chip1Stop:
Trans GP BJT NPN 55V 6A 4-Pin3+Tab SOT-89 T/R
Verical:
Trans GP BJT NPN 55V 6A 2100mW 4-Pin3+Tab SOT-89 T/R
Win Source:
TRANS NPN 55V 6A SOT89
DeviceMart:
TRANSISTOR NPN 55V 6A SOT89
频率 200 MHz
额定电压DC 55.0 V
额定电流 6.00 A
极性 NPN
耗散功率 2.1 W
击穿电压集电极-发射极 55 V
集电极最大允许电流 6A
最小电流放大倍数hFE 250 @10mA, 2V
最大电流放大倍数hFE 250
额定功率Max 2.1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2100 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
封装 SOT-89-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC