Trans GP BJT NPN 160V 0.6A Automotive 4Pin3+Tab SOT-223 T/R
Bipolar BJT Transistor NPN 160V 600mA 130MHz 2W Surface Mount SOT-223
得捷:
TRANS NPN 160V 0.6A SOT223-3
立创商城:
NPN 160V 600mA
贸泽:
Bipolar Transistors - BJT 160V 600mA NPN
艾睿:
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN ZXTN5551GTA general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT NPN 160V 0.6A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans GP BJT NPN 160V 0.6A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT NPN 160V 0.6A Automotive 4-Pin3+Tab SOT-223 T/R
DeviceMart:
TRANS NPN 160V SOT223
频率 130 MHz
极性 NPN
耗散功率 2 W
增益频宽积 130 MHz
击穿电压集电极-发射极 160 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 80 @10mA, 5V
最大电流放大倍数hFE 80
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.65 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXTN5551GTA Diodes 美台 | 当前型号 | 当前型号 |
DZT5551-13 美台 | 类似代替 | ZXTN5551GTA和DZT5551-13的区别 |