ZXTN5551ZTA

Trans GP BJT NPN 160V 0.6A 4Pin3+Tab SOT-89 T/R

Zetex brings you the solution to your high-voltage BJT needs with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.