ZVN2106GTA

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ZVN2106GTA概述

60V,710mA,2Ω,单N沟道功率MOSFET

N-Channel 60V 710mA Ta 2W Ta Surface Mount SOT-223


得捷:
MOSFET N-CH 60V 710MA SOT223


立创商城:
N沟道 60V 710mA


艾睿:
This ZVN2106GTA power MOSFET from Diodes Zetex can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with dmos technology. This N channel MOSFET transistor operates in enhancement mode.


Allied Electronics:
MOSFET N-Channel 60V 0.71A SOT223


安富利:
Trans MOSFET N-CH 60V 0.71A 4-Pin3+Tab SOT-223 T/R


TME:
Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223


Verical:
Trans MOSFET N-CH 60V 0.71A Automotive 4-Pin3+Tab SOT-223 T/R


儒卓力:
**N-CH MOS-FET 0,71A 60V SOT223 **


力源芯城:
60V,710mA,2Ω,单N沟道功率MOSFET


Win Source:
MOSFET N-CH 60V 710MA SOT223


DeviceMart:
MOSFET N-CH 60V 710MA SOT223


ZVN2106GTA中文资料参数规格
技术参数

额定电压DC 60.0 V

额定电流 710 mA

额定功率 2 W

漏源极电阻 2.00 Ω

极性 N-Channel

耗散功率 2 W

漏源极电压Vds 60 V

漏源击穿电压 60.0 V

栅源击穿电压 ±20.0 V

连续漏极电流Ids 710 mA

上升时间 8 ns

输入电容Ciss 75pF @18VVds

额定功率Max 2 W

下降时间 15 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2W Ta

封装参数

安装方式 Surface Mount

引脚数 4

封装 TO-261-4

外形尺寸

封装 TO-261-4

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

海关信息

ECCN代码 EAR99

数据手册

在线购买ZVN2106GTA
型号: ZVN2106GTA
制造商: Diodes 美台
描述:60V,710mA,2Ω,单N沟道功率MOSFET
替代型号ZVN2106GTA
型号/品牌 代替类型 替代型号对比

ZVN2106GTA

Diodes 美台

当前型号

当前型号

ZVN2106GTC

美台

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ZVN2106GTA和ZVN2106GTC的区别

ZVN2106G

美台

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