ZX5T3ZTA 编带
The PNP general purpose bipolar junction transistor, developed by Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7.5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 152 MHz
额定电压DC -40.0 V
额定电流 -5.50 A
极性 PNP
耗散功率 3000 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 5.5A
最小电流放大倍数hFE 200 @500mA, 2V
最大电流放大倍数hFE 200
额定功率Max 2.1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.6 mm
宽度 2.6 mm
高度 1.6 mm
封装 SOT-89-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZX5T3ZTA Diodes 美台 | 当前型号 | 当前型号 |
ZXTP2009ZTA 美台 | 类似代替 | ZX5T3ZTA和ZXTP2009ZTA的区别 |
ZX5T3ZTC 美台 | 类似代替 | ZX5T3ZTA和ZX5T3ZTC的区别 |